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Vaporization methods for different liquids In semiconductor devices, which require greater integration and detail, a variety of liquid sources are used to produce the thin films. HoribaSTEC offer a number of vaporization systems to accuratley control the precursor. View: Direct liquid injection systems Liquid (no carrier gas) vaporization system	Process Film Precursor Formula ILD SiO2 TEOS Si(OC2H5)4 ILD Low-K SiCO OMCTS [SiO(CH3)2-]4 TMCST [SiOH(CH3)-]4 HMDSO (CH3)3SiOSiO(CH3)3 BPSG BPSG TEOS Si(OC2H5)4 TEB B(OC2H5)3 TMB B(OCH3)3 TMP P(OCH3)3 TMOP PO(OCH3)3 TEOP PO(OC2H5)3 Etch Stopper Si3N4 HCD Si2Cl6 Gate Dielectric SiO2 TEOS Si(OC2H5)4 High-K Gate Ta2O5 PETa Ta(OC2H5)5 HfO2 TEMAH Hf[N(CH3)(C2H5)]4 TDMAH Hf[N(CH3)2]4 TDEAH Hf[N(C2H5)2]4 ZrO2 TDMAZr Zr[N(CH3)2]4 TDEAZr Zr[N(C2H5)2]4 D-RAM Capacitor SiO2 / Si3N4 TEOS Si(OC2H5)4 High-K Capacitor Ta2O5 PETa Ta(OC2H5)5 BST Ba(DPM)2 Ba(O2C11H19)2 Sr(DPM)2 Sr(O2C11H19)2 Ti(i-OC3H7)4 FeRAM Capacitor PZT Pb(DPM)2 Pb(O2C11H19)2 Zr(DPM)4 Zr(OC11H19)4 Zr(t-OC4H9)4 Ti(i-OC3H7)4 SBT Bi(DPM)3 Bi(DPM)3 Sr(DPM)2 Sr(O2C11H19)2 PETa Ta(OC2H5)5 Electrode Ru/RuO Ru-EtCp Ru(C5H4C2H5)2 Barrier Metal TiN TDMAT Ti[N(CH3)2]4 TDEAT Ti[N(C2H5)2]4 TaN TBTDET Ta(N-t-C5H11)[N(CH3)2]3